发明名称 |
HIGH SURFACE AREA METAL NITRIDES OR METAL OXYNITRIDES FOR ELECTRICAL ENERGY STORAGE |
摘要 |
The present invention concerns a process to produce a high surface area iron nitride, titanium nitride, gamma-molybdenum nitride, niobium oxynitride, tantalum oxynitride, vanadium oxynitride, zirconium oxynitride, titanium oxynitride or molybdenum oxynitride coated substrate for use as an electrical energy storage component in a capacitor or a battery configuration, which process comprises: coating a substrate with a solution or slurry of the corresponding metal halide, converting the metal halide to metal oxide, and converting the metal oxide to metal nitride or oxynitride in a gaseous nitrogen atmosphere at elevated temperature. |
申请公布号 |
WO9814970(A1) |
申请公布日期 |
1998.04.09 |
申请号 |
WO1997US17612 |
申请日期 |
1997.09.30 |
申请人 |
PINNACLE RESEARCH INSTITUTE, INC.;DENG, CHARLES, Z.;TSAI, KEH-CHI;GHANTOS, DANIA |
发明人 |
DENG, CHARLES, Z.;TSAI, KEH-CHI;GHANTOS, DANIA |
分类号 |
H01G9/00;H01G9/04;H01G9/042;H01G9/155;H01M4/00;H01M4/58 |
主分类号 |
H01G9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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