摘要 |
The method involves treating a layer with an alkaline solution while a certain amount of thickness is removed from the side face of the silicon disc. The defects on the side face, exposed by the treatment, are examined by a surface inspection apparatus for numbers and extent. At least one side face of the silicon disc is polished. Preferably the treatment solution contains NH4OH, H2O2, and H2O. Typically the amount of material, removed from the Si disc, is determined by weighing.
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申请人 |
WACKER SILTRONIC GESELLSCHAFT FUER HALBLEITERMATERIALIEN AG, 84489 BURGHAUSEN, DE |
发明人 |
GRAEF, DIETER, DIPL.-PHYS. DR., 84489 BURGHAUSEN, DE;VALOUCH, GERTRUD, 84489 BURGHAUSEN, DE;BROHL, MICHAEL, DIPL.-PHYS. DR., PORTLAND, OREG., US;SCHMOLKE, RUEDIGER, DIPL.-PHYS. DR., 84489 BURGHAUSEN, DE;SUHREN, MONIQUE, DIPL.-CHEM. DR., 84489 BURGHAUSEN, DE;WAGNER, PETER, DIPL.-PHYS. DR., 84489 BURGHAUSEN, DE |