| 摘要 |
<p>The present invention provides a method of manufacturing a semiconductor device on a substrate (100). The process involves denuding the substrate (100) by heating to create a denuded zone (102) within the substrate. A screen oxide layer (112) is formed prior to implanting ions into the substrate (100) and this oxide layer (112) remains during the implantation step. The screen oxide layer (112) can then be removed when forming gates for the semiconductor device.</p> |
