Correction method leading to a uniform threshold voltage distribution for a flash eprom

摘要

A method for correcting over-corrected memory cells in a flash EPROM. The flash EPROM includes an array of memory cells (25), where each of the cells includes a gate 18, a floating gate (16), a source (12), a drain (14), and a substrate (10). The method includes bulk erasing each of cells in the array of cells (step 40), which results in a plurality of over-erased cells. The over-erased cells are then corrected (step 42), which results in a plurality of over-corrected cells. The over-corrected cells are identified (step 44) and selectively erased (step 46), such that a uniform threshold voltage distribution (54) is provided for the cells in the flash EPROM.