发明名称 HIGH SURFACE AREA METAL NITRIDES OR METAL OXYNITRIDES FOR ELECTRICAL ENERGY STORAGE
摘要 The present invention concerns a process to produce a high surface area iron nitride, titanium nitride, gamma-molybdenum nitride, niobium oxynitride, tantalum oxynitride, vanadium oxynitride, zirconium oxynitride, titanium oxynitride or molybdenum oxynitride coated substrate for use as an electrical energy storage component in a capacitor or a battery configuration, which process comprises: coating a substrate with a solution or slurry of the corresponding metal halide, converting the metal halide to metal oxide, and converting the metal oxide to metal nitride or oxynitride in a gaseous nitrogen atmosphere at elevated temperature.
申请公布号 CA2267439(A1) 申请公布日期 1998.04.09
申请号 CA19972267439 申请日期 1997.09.30
申请人 PINNACLE RESEARCH INSTITUTE, INC. 发明人 DENG, CHARLES Z.;GHANTOS, DANIA;TSAI, KEH-CHI
分类号 H01G9/00;H01G9/04;H01G9/042;H01G9/155;H01M4/00;H01M4/58;(IPC1-7):H01G9/042 主分类号 H01G9/00
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