Amorphous carbon film, formation process thereof, and semiconductor device making use of the film

摘要

This invention relates to a fluorine-containing amorphous carbon film with benzene rings distributed therein. The film is formed by plasma CVD while using an aromatic hydrocarbon gas and a fluoride gas as raw materials. This invention is also concerned with a semiconductor layer which features use of the fluorine-containing amorphous carbon film as an interlayer insulating film. The fluorine-containing amorphous carbon film has a low specific dielectric constant, does not contain much intrafilm water and is superior in heat resistance, so that the fluorine-containing amorphous carbon film permits application of a known conductive-pattern-forming process, which requires heat treatment at elevated temperature, and can provide a semiconductor device with reduced signal delays.