发明名称 Semiconductor device fabricating method of semiconductor device, and die-bonding method of semiconductor device
摘要 A semiconductor device includes a semiconductor substrate (1a) having a first main surface; and a thermoplastic conductive resin layer (7a) comprising thermoplastic resin including particles comprising conductive material disposed on a first main surface of the semiconductor substrate (1a). Therefore, positional deviation of the semiconductor device with a resin layer while die-bonding the semiconductor device is dispensed with, thereby increasing the fabrication yield. In addition, an apparatus and a process for disposing resin on a package can be omitted, thereby the die-bonding can be performed at a low cost. <IMAGE>
申请公布号 EP0730294(A3) 申请公布日期 1998.04.08
申请号 EP19950118241 申请日期 1995.11.20
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 GOTOH, KEI
分类号 H01L21/52;H01L21/02;H01L21/58;H01L23/495 主分类号 H01L21/52
代理机构 代理人
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