SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

A semiconductor device and fabrication method thereof is provided to improve a reliability by preventing an opening of gate member using a side-walls spacer and an insulating layer. The semiconductor device comprises: a gate insulator(13) formed on a semiconductor substrate(10); a polysilicon lower gate member(14) formed on the gate insulator(13); a polysilicon upper gate member(15) having short length compared to the lower gate member(14) and formed on the lower gate member; an insulating layer(16) formed on the upper gate member(15); and a side-wall spacer(18) formed at both side-walls of the upper gate member(15) and the insulating layer(16), thereby forming reverse T-shaped gate.