| 摘要 |
An improved method and circuit for a word line driver in memory integrated circuits is disclosed. Instead of connecting the gate terminal of an isolation transistor to a constant high power supply voltage, the present invention momentarily boosts the voltage at the gate terminal to allow for a full logic high voltage to be transferred to the gate terminal of a word line driver transistor. Then the voltage at the gate terminal of the isolation transistor is reduced to its original level before the signal at the drain terminal of the word line driver transistor is boosted from ground to voltages above the power supply level. Thus, a maximized boosted voltage is trapped at the gate terminal of the word line driver transistor to improve the drive capability of the word line driver transistor.
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