| 摘要 |
The method for improving permeability of oxide film includes the steps of (a) forming the metal layer(2) on the substrate(1) and TEOS(Tetra Ethyl Ortho Silicate) film(3) which has good layer covering on the surface of the entire structure by using PECVD, (b) forming TEOS film(5) on top of the SOG film(4) again using PECVD to protect the SOG film(4) after forming SOG film(4) which is appropriate for the smooth and has exellent heat resistance on top of the entire structure next. (c) For the last step, injecting the ions(Si, Ge, etc.)(6) that is simialr or same with teh major element of SOG film(4) and TEOS film(3,5) to TEOS film(3,5) and SOG film(4) and at this point, the ions(6) form an ununited bond inside the SOG film(4) and the TEOS film(3,5) and this ununited bond unites with ions that are related to moist resulting in preventing the movement of moist related ion to plan the electrical safety of element.
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