SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Metal wires are formed side by side over a semiconductor substrate, with an interlayer insulating film interposed between the metal interconnections and the semiconductor substrate. The metal interconnections are covered with a passivation film composed of a lower silicon oxide film and an upper silicon nitride film. The silicon oxide film is deposited so that the maximum thickness of the portions of the silicon oxide film on the side faces of the metal interconnections is less than half of the minimum space between the metal interconnections. The silicon nitride film is deposited so as to be interposed between the portions of the silicon oxide film on the side faces of the adjacent metal interconnections.