发明名称 |
Vertical PNP power device with different ballastic resistant vertical PNP transistors |
摘要 |
Disclosed are devices having emitters having resistive emitter diffusion sections are in a radial pattern. Such devices include vertical PNP power devices. The radial pattern of holes defines resistive emitter diffusion sections between adjacent holes. The resistive emitter diffusion sections result in a lower emitter ballast resistance due to the higher emitter sheet resistance of PNP devices. This allows all the periphery of the emitter to be active, not just two sides. The device has improved emitter ballast resistance while at the same time remaining efficient with low saturation resistance.
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申请公布号 |
US5736755(A) |
申请公布日期 |
1998.04.07 |
申请号 |
US19950525894 |
申请日期 |
1995.09.08 |
申请人 |
DELCO ELECTRONICS CORPORATION |
发明人 |
FRUTH, JOHN ROTHGEB;KASZYCA, JOHN KEVIN;GOSE, MARK WENDELL |
分类号 |
H01L29/06;(IPC1-7):H01L27/082;H01L27/102;H01L29/70 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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