发明名称 |
Semiconductor device and bonding pad structure therefor |
摘要 |
In a semiconductor device having a bonding pad structure of a multilayered wiring structure comprising a first wiring layer and a second wiring layers which is located over the first wiring layer and an interlayer insulation layer between the wiring layers which has an electrically conductive component so as to electrically connect the wiring layers, the bonding pad structure is such that no crack is formed in the interlayer insulation layer during wire bonding. The bonding pad structure is so arranged that an area of the first wiring layer area is smaller than that of the second wiring layer or the first wiring layer is formed outside a bonding region of the second wiring layer under the second wiring layer.
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申请公布号 |
US5736791(A) |
申请公布日期 |
1998.04.07 |
申请号 |
US19950479205 |
申请日期 |
1995.06.07 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUJIKI, NORIAKI;YAMASHITA, TAKASHI |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L23/48;H01L23/52;H01L23/40 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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