| 摘要 |
PROBLEM TO BE SOLVED: To reduce threshold current and stabilize lateral mode, even if output is increased and stripe length is increased in a taper striped-type semiconductor laser that is of gain-guide type structure where the lateral mode is made single- ridged. SOLUTION: In a laser, a current injection region for an active layer in stripe-shaped, and a refractive index differenceΔn between a stripe part and the outside of a semiconductor laser with a gain-guide type structure is set toΔn<=5×10<-4> . In this case, the width of a stripe part 19 is decreased at least at the side of one light-emitting end face S1 and is increased at a center part side in the direction of stripe length and at least one narrow neck part 19nc is formed at the wide part.
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