Dry-etching-free process for high dielectric and ferroelectric memory cell capacitor

摘要

Aims to provide a dielectric capacitor and a dielectric memory device wherein residue is minimal, electric current leakage is minimal, the shape is superior, is suited for enhancing the integration, and has favorable insulation property and an economical and efficient manufacturing method. Dielectric capacitors CAP(1)-CAP(4)) which have bottom electrode 29, dielectric films 20 and 34 formed by contacting this bottom electrode, top electrode 23 formed by contacting this dielectric film, and insulation films 21 and 33 provided by contacting the periphery of bottom electrode 29, and wherein elimination part 17 is formed beforehand in said insulation film, bottom electrode 29 adhered at least within said elimination part is formed into smooth concave surface 29a or convex surface 29b according to etch back or chemical-mechanical polishing process, and dielectric film 20 is formed on this surface, dielectric memory devices M-CEL(1)-M-CEL(4) which have these dielectric capacitors, and a manufacturing method for these capacitors or memory cells. <IMAGE>