| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the volume of generated PFC to eliminate its harmful effects and at the same time, inhibit the high temperature corrosion attributed to a byproduct F2 by heating a water-insoluble and heat-decomposable gas contained in an exhaust gas generated from the semiconductor cleaning process after the removal by water wash of a hydrolytic gas contained in the exhaust gas and removing by water wash the generated metal corrosive and hydrolytic gas. SOLUTION: First, an exhaust gas generated from the semiconductor cleaning process using a semiconductor manufacturing device is diluted to a specified concentration with an inert gas. Then the diluted exhaust gas is introduced into an inlet scrubber 8 to spray atomized cleaning water from a shower nozzle 8a. Consequently, a hydrolytic gas and/or a water-soluble gas are removed by water wash through a gas and liquid contact. After that, the water-washed exhaust gas is guided to a heat-reaction part 2 to be heated with a heater 5, and as a result, a water-insoluble, heat-decomposable gas is thermally decomposed. Next, the decomposed gas is guided to an outlet scrubber 9 to bring the decomposed gas to come into contact with a cleaning water from a shower nozzle 9a. Thus a metal-corrosive and hydrolytic gas and/or a water-soluble gas which are contained in a byproduct gas generated by heat decomposition are removed by water wash. The device is permanently used after the removal of the corrosive component.</p> |
