发明名称 |
Method for fabricating phase inverted mask |
摘要 |
A method of fabricating a phase inverted mask comprising the steps of forming a shielding layer pattern on a substrate, injecting oxygen ions into a surface of the shielding layer pattern, and converting the shielding layer pattern having the oxygen ions injected therein into an oxidation layer to thereby form a phase inverted layer. |
申请公布号 |
US5736276(A) |
申请公布日期 |
1998.04.07 |
申请号 |
US19960657610 |
申请日期 |
1996.05.31 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
KIM, YOUNG GWAN;HAN, HYUN KYU |
分类号 |
G03F1/08;G03F1/00;G03F1/29;G03F1/68;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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