| 摘要 |
A fabrication method of high speed semiconductor devices using a trench etching is disclosed. The method comprises the steps of: forming an epitaxial layer(13) on a P-type substrate(11) having a buried layer(12); forming a first trench by etching the epitaxial layer(13) and a portion of the substrate(11) to isolate between devices; filling a thin oxide(14) and a polysilicon(15) into the trench; forming a base(17) by implanting ions; forming a second trench at the side of the base(17); and filling a thin oxide(18) and a polysilicon(19) into the trench.
|
