| 摘要 |
If the pattern parts(2) formed in case of etching the metal layer of the semiconductor device using the mask which has a space as much as M between the pattern parts(1) are laid on the same line, then it shows that the upper part and the lower part against the mask pattern part(1) are crossed each other with the amounts of M in the pattern part(2). Accordingly, in case the pattern part(2) of the formed layer is laid on the same line, it shows how similarly the pattern part(2) is formed as compared with the original mask pattern part(1). Therefore, by observing the pattern part of the formed layer with naked eyes, it can be confirmed how similarly it is formed as compared with the original mask pattern part.
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