| 摘要 |
A charge generation device configured within a semiconductor region of a substrate. The device includes a source for providing an input charge and an input diffusion which receives said input charge. A barrier gate associated with the input diffusion determines a selected potential of the input diffusion. A preset diffusion presets the input diffusion to the selected potential. An output element receives the input charge from the input diffusion. A first coupling means is provided for coupling the preset diffusion to the input diffusion subsequent to the output diffusion receiving the input charge during a first clock cycle, and for decoupling the preset diffusion from the input diffusion prior to the input diffusion receiving the input charge during a second clock cycle. A second coupling means is provided for coupling the output element to the input diffusion, subsequent to the decoupling of the preset diffusion from the input diffusion during the second clock cycle, and for decoupling the output element from the input diffusion prior to the coupling of the preset diffusion to the input diffusion during a third clock cycle.
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