METHOD FOR PROCESSING SURFACE OF GaAs SUBSTRATE

摘要

A method of processing the surface of a GaAs substrate includes the steps of introducing NH3 gas into a predetermined chamber in high-degree vacuum state, in which the GaAs substrate cleaned is being loaded, ionizing the NH3 gas according to plasma generation to form excited nitrogen atoms, heating the GaAs substrate to allow the As ion to be activated to form GaN on the GaAs substrate. When the GaAs is heated up to above 500 deg C, as atoms are out of the surface of GaAs. The excited nitrogen atoms replace the location of the GaAs, from which the As ion is escaped, to form GaN having a wide bandgap on the GaAs.