Semiconductor component with several transistor types

摘要

A semiconductor component comprises a semiconductor substrate containing three transistor types, each of which has a first conductivity type first, second or third semiconductor layer in the substrate surface, a first conductivity type first, second or third channel doping layer selectively formed in the semiconductor layer and a first, second or third control electrode formed on the semiconductor layer at a position facing the respective channel doping layer, at least one of the three control electrodes having an internal second conductivity type impurity layer with a concentration distribution in the depth direction. Also claimed is a process for producing the above semiconductor component. Further claimed is production of a semiconductor component with first and second transistor types on a single semiconductor substrate, involving (i) selectively forming a field oxide layer on the substrate surface to define first and second transistor type regions; (ii) forming an oxide layer on the two regions and over the field oxide layer; (iii) forming a conductive control electrode layer on the oxide layer; and (iv) introducing an impurity, having the same conductivity type as that of a source/drain layer, into the conductive layer at the first and/or second region.