发明名称 |
Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of same |
摘要 |
Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of the same are disclosed. In one embodiment a plasma reactor is used to anisotropically convert unmasked portions of a copper layer at low temperature into copper chloride. The copper chloride is removed by one or more of the following steps: (1) solvation by a solvent specific to the copper chloride; (2) vaporizing the copper chloride away; and (3) converting the copper chloride into a volatile, secondary compound. In another embodiment an ion implanter is used to anisotropically convert desired portions of a copper layer into copper oxide. The copper oxide is removed by one or more of the following steps: (1) solvation by a solvent specific to the copper oxide; (2) vaporizing the copper oxide away; and (3) converting the copper oxide into a volatile, secondary compound.
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申请公布号 |
US5736002(A) |
申请公布日期 |
1998.04.07 |
申请号 |
US19940293821 |
申请日期 |
1994.08.22 |
申请人 |
SHARP MICROELECTRONICS TECHNOLOGY, INC.;SHARP KABUSHIKI KAISHA |
发明人 |
ALLEN, LYNN RENEE;GRANT, JOHN MARTIN |
分类号 |
C23F1/18;C23F4/00;C23G5/00;H01L21/3205;H01L21/3213;H01L21/768;H01L23/52;(IPC1-7):H01L21/32;H01L21/302;H01L21/306 |
主分类号 |
C23F1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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