发明名称 Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of same
摘要 Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of the same are disclosed. In one embodiment a plasma reactor is used to anisotropically convert unmasked portions of a copper layer at low temperature into copper chloride. The copper chloride is removed by one or more of the following steps: (1) solvation by a solvent specific to the copper chloride; (2) vaporizing the copper chloride away; and (3) converting the copper chloride into a volatile, secondary compound. In another embodiment an ion implanter is used to anisotropically convert desired portions of a copper layer into copper oxide. The copper oxide is removed by one or more of the following steps: (1) solvation by a solvent specific to the copper oxide; (2) vaporizing the copper oxide away; and (3) converting the copper oxide into a volatile, secondary compound.
申请公布号 US5736002(A) 申请公布日期 1998.04.07
申请号 US19940293821 申请日期 1994.08.22
申请人 SHARP MICROELECTRONICS TECHNOLOGY, INC.;SHARP KABUSHIKI KAISHA 发明人 ALLEN, LYNN RENEE;GRANT, JOHN MARTIN
分类号 C23F1/18;C23F4/00;C23G5/00;H01L21/3205;H01L21/3213;H01L21/768;H01L23/52;(IPC1-7):H01L21/32;H01L21/302;H01L21/306 主分类号 C23F1/18
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