发明名称 |
Semiconductor device and associated fabrication method |
摘要 |
Mounted on a single semiconductor substrate are a DRAM, MOS transistor, resistor, and capacitor. The gate electrode of the DRAM and the gate electrode of the MOS transistor are formed by a common layer (i.e., a first-level poly-Si layer). The storage electrode of the DRAM. the resistor, and the lower electrode of the capacitor are formed by a common layer (i.e., a third-level poly-Si layer). The plate electrode of the DRAM and the upper electrode of the capacitor are formed by a common layer (i.e., a fourth-level poly-Si layer). |
申请公布号 |
US5736421(A) |
申请公布日期 |
1998.04.07 |
申请号 |
US19960589897 |
申请日期 |
1996.01.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SHIMOMURA, HIROSHI;MORITA, KIYOYUKI;NAKABAYASHI, TAKASHI;UEHARA, TAKASHI;YASUHIRA, MITSUO;SEGAWA, MIZUKI;HIRAI, TAKEHIRO |
分类号 |
H01L21/768;H01L21/8239;H01L21/8242;H01L27/06;H01L27/105;H01L27/108;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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