FORMING METHOD OF CONTACT HOLE IN THE SEMICONDUCTOR DEVICE

摘要

A fabrication method of contact holes is provided to improve a margin of design rules using two exposing mask. The method of comprises the steps of: forming an insulating layer(32) and a photoresist(34) on a substrate(30); first exposing the PR(34) using a first exposing mask(20) to define two photosensitive regions(36) positioned at a diagonal direction each other; second exposing the PR(34) using a second exposing mask(21) to define two photosensitive regions(37) positioned at a diagonal direction each other; removing the exposed photosensitive regions(36,37) to form a PR pattern; and forming a contact holes(38) by etching the exposed insulating layer(32) using the PR pattern defined by the two exposing masks(20,21). Thereby, it is possible to easily form fine contact holes and increase the margin of design rules.