发明名称 |
Method of fabricating a MOS device having a gate-side air-gap structure |
摘要 |
A method of fabricating a MOS device having a gate-side air-gap structure is provided. A nitride spacer for reserving space of the air gap is formed on the substrate adjacent to the gate structure. An amorphous silicon spacer for forming the sidewall spacer and sealing the air gap is formed adjacent to the nitride spacer. The upper portion of the amorphous silicon spacer is heavily doped during the source/drain implantation. After removing the nitride spacer the doped amorphous silicon spacer is oxidized by a wet oxidation process to form a doped oxide spacer. The growing doped oxide spacer will seal the hole for the nitride spacer resulting from the heavily doped upper portion having a higher oxidation rate than that of other portions. Dopants implanted in the amorphous silicon spacer migrate into the substrate and extended ultra-shallow doped regions are formed that reduce the series resistance of the LDD structure.
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申请公布号 |
US5736446(A) |
申请公布日期 |
1998.04.07 |
申请号 |
US19970859753 |
申请日期 |
1997.05.21 |
申请人 |
POWERCHIP SEMICONDUCTOR CORP. |
发明人 |
WU, SHYE-LIN |
分类号 |
H01L21/225;H01L21/336;H01L21/8234;H01L29/10;H01L29/49;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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