| 摘要 |
TFD semiconductor element is manufactured by; (a) Channel ion implantation executes selectively on channel region of p-type semiconductor substrate(21), and also Thick Field Oxide film(26) is formed on non-channel region of one(21). (b) Field oxide film is removed selectively for field oxide film(26) to leave on both side of channel region, and high density n-type ion implantation is done so that emitter and collector impurity diffusion region(28)(29) is formed. (c) Metal electrode(33)(32) is formed so that it may connect with emitter and collector impurity diffusion region(28)(29) through contact hole.
|
