| 摘要 |
The thin film transistor is produced in the following steps. (a) Pattern after evaporating the polysilicon film(1) for gate. (b) After evaporating in the order of gate oxide film(2), channel polysilicon film(4), and insulator film(5) for mask, form the photoresist film(7) pattern which is a LDO(Low Doping Offset) mask and remove the photoresist film(7) after LDO ion injection(8). (c) Form the photoresist film(9) pattern which is a channel mask and after etching in the order of insulator film(5) for mask, channel polysilicon film(4), and gate oxide film(2), remove the photoresist film(9). (d) Pattern the source and drain polysilicon film(6A,6B).
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