| 摘要 |
The channel length deciding method for the transistor is comprised of the step of (a) supplying the gate-source voltage(Vgs) and the drain-source bias voltage(Vds) of the transistor to be measured, respectively, then increasing the gate bias voltage(Vg) step by step, measuring the drain-source current(Ids) at respective step, the step of (b) deciding the respective drain-source resistance(Rds) using the measured drain-source current(Ids), the step of (c) deciding a slope of a predetermined drain-source resistance(Rds) of the transistor to the difference(delta Rds) between the respective drain-source resistance at a predetermined gate bias voltage(Vg), and the step of (d) finding difference(delta L) of the optimized channel length using the decided slope(M) and the physical gate length, then deciding the optimized channel length(Leff) using the difference(delta L).
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