| 摘要 |
The MOS transistor manufacturing method is comprised of the step of (a) piling a pad oxide film(52), a polysilicon layer(54) and a silicon nitride film(56) on a semiconductor substrate in succession, etching the silicon nitride film for the polysilicon layer corresponding to a first through sixth regions on the substrate to be exposed, then forming a first impurity region(58) in a part of the first region, a part of the second through fifth region and a part of the sixth region, forming a second impurity region(60) in the remaining region adjacent to the first impurity region of the first and the sixth region, the step of (b) forming field oxidation film in the first through the sixth region, removing the silicon nitride film, the polysilicon layer and the pad oxide film, the step of (c) growing the oxide film on the results, patterning the oxide film to form the gate oxide film, forming the polysilicon layer, then forming a third impurity region(68), the step of (d) forming a fourth impurity region(70) in an outside region of the first and the sixth region.
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