REMOVING METHOD OF OXIDE-FILM ON THE POLY-SILICON FILM

摘要

The oxide film removing method is comprised of the step of (a) dry-etching the polysilicon film of an upper layer part using a charge storage electrode mask(4), the step of (b) wet-etching a sacrifice oxide film(3) using solution for wet-etching, then adding the surface active agent to pure water to the extent of 0.1-0.5% upon the cleaning process and performing the cleaning process to make an upper part of the polysilicon film of a lower layer part hydrophilic, suppressing generation of alien substance, and the step of (c) dry-etching the polysilicon film(2) of the lower layer part.