| 摘要 |
The transistor by self-alignment is produced as the following steps. (a) Form the nitride film(22) and the field oxide film(23) on the silicon substrate(21) by the LOCOS process. (b) After exposing the silicon substrate(21) by etching the field oxide film(23) some fixed amount, evaporate the nitride film again on top of the entire structure, and then form the nitride film spacer(22') by spacer etching. (c) After coating the photoresist film(32) with ion implantation mask at the exposed region due to the field oxide film(23) s etching, remove the nitride film(22) and form the source/drain region(24) by ion implantation. (d) After exposing the silicon substrate(21) by removing the photoresist film(32), form the channel region(26) by ion injection and then gain the stable element characteristic by forming the gate oxide film(27), the gate poly-silicon film(28), between layer insulating film(29), and the source/drain electrode(30).
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