| 摘要 |
PROBLEM TO BE SOLVED: To attain practicality of a semiconductor photohole burning memory, making refreshable its storing informations by adding only simple improvements to its structure. SOLUTION: Between upper and lower barrier layers 4, there are provided a plurality of sets in each of which a quantum well layer 3 (the quantum well of a type 1), a quantum well layer 2 (the quantum well of a type 2), and a quantum dot layer 1 are laminated upward in this order via each barrier layer, so that top and bottom electrode 5 are formed respectively on the top and bottom barrier layers 4 for making applicable a voltage across the foregoing laminated semiconductor layer of a structure. Further, there are provided respectively upper and lower units consisting of identical structure so as to enable incidence of a refreshing light on the side of each of the both units. |
