Verfahren zur nass-chemischen Ätzung bzw. Oberflächenreinigung von arsenhaltigen Mischkristallverbindungen

摘要

This invention concerns a process for wet chemical etching or surface cleaning of mixed crystal compounds containing arsenic in III-V-semiconductor systems, which are based, in particular, on InP and/or GaAs. To carry out wet chemical etching or surface cleaning, an etching or cleaning solution containing sulphuric acid and an oxidizing agent is used. The volume concentration of the oxidizing agent in the etching or cleaning solution is lower than 3 %.