发明名称 HYBRID MICROWAVE-FREQUENCY INTEGRATED CIRCUIT
摘要 A hybrid microwave-frequency integrated circuit comprises a dielectric board (1) with an opening (4). The front side of the board (1) comprises a metallisation layout pattern (2), while the rear side comprises a screen-type grounding metallic coating (3). This circuit also comprises a metallic base (5) with a projection (6). The opening (4) in the board (1) comprises a choke (9) at a height between 1 and 300 mu m from the front surface of said board (1), while the projection (6) is located in the wide section (10) of said opening (4). The contact surfaces (8) of the crystal (3) are grounded and connected to the projection (6) by the choke (9) of the opening (4) which is filled with an electro- and thermo-conductive material (11). The size of the wide section (10) of the opening (4) ranges from 0.2 x 0.2 mm to that of the crystal (7), while the distance between the side walls of the projection (6) and the side walls of the wide section (10) of the opening (4) ranges from 0.001 to 1.0 mm.
申请公布号 WO9813876(A1) 申请公布日期 1998.04.02
申请号 WO1996RU00278 申请日期 1996.09.26
申请人 SAMSUNG ELECTRONICS CO., LTD.;IOVDALSKY, VIKTOR ANATOLIEVICH;AIZENBERG, EDUARD VOLFOVICH 发明人 IOVDALSKY, VIKTOR ANATOLIEVICH;BEIL, VLADIMIR ILIICH;LOPIN, MIKHAIL IVANOVICH;AIZENBERG, EDUARD VOLFOVICH
分类号 H01L21/3205;H01L21/60;H01L21/822;H01L23/12;H01L23/36;H01L23/52;H01L23/66;H01L25/16;H01L27/02;H01L27/04;(IPC1-7):H01L27/01 主分类号 H01L21/3205
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