The invention concerns a storage arrangement (1) which consists of identical storage cells and comprises storage capacitors which are disposed above the selection transistors and whose first electrodes (14) are strip-shaped and disposed perpendicularly on a first main surface (2). The surfaces of the first electrodes (14) and hence the capacitor surfaces can be varied, for example, by varying the heights of the first electrodes (14) or, when the cell surfaces (5) are sensibly arranged, by overlapping cell surfaces (5) adjacent the first electrodes (14).
