| 摘要 |
<p>A semiconductor device comprises a half-bridge circuit, one of the two arms or elements of which is a thyrister, and the other is a bi-polar transistor. It is structured vertically as a single semiconductor chip with a primary conductor type cathode area of the thyrister and a primary conductor type collector area of the bi-polar transistor shared as common areas. A first isolation area is formed between a intermediate layer of the thyrister and the above described common area. A second isolation area is formed in the first isolation area provided between the intermediate layer of the thyrister and the base area of the bi-polar transistor. Because the upper and lower arms of the half-bridge are vertically structured, the circuit provides for excellent area efficiency, current amplification factor, and current capacity. No specific isolation layers are required to isolate the upper arm from the lower arm. The first and second isolation areas suppress leakage current generated by the formation of incidental npn and pnp structures. Additionally, vertically structured single semiconductor chip half-bridge circuit are described comprising a p-channel IGBT as an upper arm and an n-channel MOS as a lower arm, or comprising a p-channel MOS as an upper arm and an n-channel IGBT as a lower arm.</p> |
