| 摘要 |
A method for cleaning a semiconductor substrate and a cleaning liquid used therein is disclosed. A semiconductor substrate, particularly the semiconductor substrate where a polycide structure is formed, is cleaned by the cleaning liquid of TC-1. The TC-1 is the liquid which is obtained by mixing aqueous solutions of tetra Methyl Ammonium Hydroxide(NR4OH) and H2O2 and delonized water. A word line layer is formed on the semiconductor substrate, it is one selected from the group consisting of a metal layer, a metal nitride layer, metal silicide layer, layers of polysilicon and metal, layers of polysilicon and metal silicide, and layers of polysilicon and metal nitride. Thereby, it is possible to remove particle, polymer and metallic impurities without the damage of a word line structure.
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