ISOLATION OXIDE FILM FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

A fabrication method of a field oxide which can minimize a bird's beak is disclosed. On a semiconductor substrate(1), an oxide barrier layer(3) and an highly oxidizing layer(11) are formed in an active region and a field region, respectively. A field oxide film(20) is selectively growing only in the highly oxidizing layer(11) being form the field region. Thereby, it is possible to minimize the size of bird's beak and increase the width of the active region.