SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device is provided to improve a reliability by preventing N-channel field conduction. The semiconductor device includes double metal wires composed of lower metal wire(2) and upper metal wire(6). A plurality of flattening insulators are formed between the upper metal wire(6) and the lower metal wire(2). The flattening insulators comprises TEOS(tetra ethyl ortho silicate) layer(3), polymer SOG(spin on glass) layer(4) and SiH4 oxide layer(7) including dangling bonds. By using the insulators of TEOS layer(3)/SOG layer(4)/SiH4 layer(7) structure, a reliability and an yield of device are increased by preventing N-channel field conduction and hot electron effect due to diffused hydrogen atoms.