FERROELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR MEMORY, AND METHOD OF MANUFACTURING THE SAME

摘要

A ferroelectric material, the basic structure of which comprises ReMnO3, wherein one of Re and Mn is contained more than the other by 20 at% at most; or a quadrivalent element is added. In a method of manufacturing the ferroelectric material, a partial pressure of oxygen in a growth apparatus such as a vacuum deposition apparatus is set low, and a film is formed while an oxidation source is blown from an oxidation source supply passage (6) onto a surface, on which a film is to be formed, of a substrate (4). Owing to this constitution, a ferroelectric material of a small leakage current and improved ferroelectric characteristics is obtained, and when the material is used for semiconductor memory the characteristics of the semiconductor memory can be improved.