Halbleiteranordnung mit einer Schicht aus einem Edelmetall und Verfahren zum Herstellen derselben

摘要

This invention concerns a semiconductor device in which a silicon nitride layer (4) is used as a bonding agent between a precious metal layer, in particular a platinum layer (6), and a substrate. The silicon nitride layer itself (4) can serve as the substrate. The process according to the invention is characterized by the fact that, to increase the bonding property of the precious metal layer (6) to the silicon nitride layer, a substrate bias voltage of approximately 250 V is applied between the silicon nitride layer (4) and an anode (5).