OXYDATION METHOD OF POLY-SILICON

摘要

A method for fabricating a oxide layer of polycrystalline silicon is disclosed. The method for fabricating the oxide layer of polycrystalline silicon comprises the steps of: a) forming a polycrystalline silicon(12) on a semiconductor substrate(11); b) forming a first thermal oxide layer(13) having a first thin thickness; c) depositing a silk polycrystalline silicon(14) on the first thermal oxide layer(13); d) forming a second thermal oxide layer(15) having a second thickness oxidizing the silk polycrystalline silicon(14); and e) forming a single oxide layer composing of the first and second thermal oxide layer(13,15) oxidizing overall the silk polycrystalline silicon(14). Thereby, a surface roughness of the thermal oxide layer is significantly improved oxidizing overall the thermal oxide layer.