SILICIDE OF FORMATION METHOD

摘要

The method is characterized by comprising the steps of: forming a conduction film(23), a first insulating film(25) in turn on a semiconductor substrate having a pattern; removing some part of the conduction film(23) by over-etching to the conduction film(23) after selective-etching of the expected part of the first insulating film(25); forming a second insulating film(25'); and removing some part of the second insulating film(25'), the first insulating film(25), the conduction film(23) by etching and remaining a part of the conducting film(23) on the side of the silicide film(24). The method is for preventing the blow-up of the silicide film.