发明名称 Smooth surfaced poly-silicon layer production
摘要 A polysilicon layer production process involves (a) depositing an amorphous silicon layer (21) and then an optionally doped silica glass layer (31) on a substrate (1); and (b) furnace heating to effect complete crystallisation of the amorphous silicon layer (21) into a polycrystalline silicon layer and to cause flow of the glass layer (31) over the polysilicon layer.
申请公布号 DE19639432(A1) 申请公布日期 1998.04.02
申请号 DE19961039432 申请日期 1996.09.25
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 KUTTER, CHRISTOPH, DR., 81545 MUENCHEN, DE;SCHUETTEN, RALF, 81739 MUENCHEN, DE;KAUFMANN, MARTIN, 81667 MUENCHEN, DE;JENKINS, JAMES, 82327 TUTZING, DE;TEMPEL, GEORG, DR., 85604 ZORNEDING, DE
分类号 H01L21/20;H01L21/8247;(IPC1-7):H01L21/320;H01L21/824;C23C16/24;C30B31/12 主分类号 H01L21/20
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