发明名称 BACK BIAS VOLTAGE GENERATOR
摘要 A back bias voltage generator is provided to improve a reliability of transistor junction by maintaining constant level to the back bias voltage regardless of change of external voltage(Vcc). The generator comprises: a reference voltage generating part(23) for generating an internal voltage(VREG) of constant level compared to internal voltage control signal(VREF); a back bias voltage sensor(24) for outputting an oscillation enable signal(OSCEN) according to the exteranl voltage(Vcc) and an oscillation enable signal(OSCEN) accroding to the internal voltage(VREG); an oscillator(25) for generating an oscillation signal in accordance with the OSCEN and outputting VBBOKB signal to the reference voltage generating part(23); and a back bias voltage pumping part(26) for generating a back bias voltage(VBB).
申请公布号 KR0127318(B1) 申请公布日期 1998.04.02
申请号 KR19940007758 申请日期 1994.04.13
申请人 LG SEMICONDUCTOR CO.,LTD 发明人 KIM, TAE-HOON;CHON, YOUNG-HUN
分类号 H01L27/04;G11C5/14;G11C11/408;H01L21/822;H02M3/07;(IPC1-7):G11C5/14 主分类号 H01L27/04
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