发明名称 |
BACK BIAS VOLTAGE GENERATOR |
摘要 |
A back bias voltage generator is provided to improve a reliability of transistor junction by maintaining constant level to the back bias voltage regardless of change of external voltage(Vcc). The generator comprises: a reference voltage generating part(23) for generating an internal voltage(VREG) of constant level compared to internal voltage control signal(VREF); a back bias voltage sensor(24) for outputting an oscillation enable signal(OSCEN) according to the exteranl voltage(Vcc) and an oscillation enable signal(OSCEN) accroding to the internal voltage(VREG); an oscillator(25) for generating an oscillation signal in accordance with the OSCEN and outputting VBBOKB signal to the reference voltage generating part(23); and a back bias voltage pumping part(26) for generating a back bias voltage(VBB). |
申请公布号 |
KR0127318(B1) |
申请公布日期 |
1998.04.02 |
申请号 |
KR19940007758 |
申请日期 |
1994.04.13 |
申请人 |
LG SEMICONDUCTOR CO.,LTD |
发明人 |
KIM, TAE-HOON;CHON, YOUNG-HUN |
分类号 |
H01L27/04;G11C5/14;G11C11/408;H01L21/822;H02M3/07;(IPC1-7):G11C5/14 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|