Epitaxie auf einem Substrat

摘要

A substrate wafer for epitaxy of a compound semiconductor single crystal and an epitaxy using the substrate wafer are disclosed. Where the orientation off-angle from the <100> plane of an area available for device formation of a surface of the substrate wafer is theta <.>, and the growth rate on an epitaxial layer on the substrate wafer is V mu m/hr, and the growth temperature of the epitaxial layer is T K, the orientation off-angle theta <.> is given by the following expression: $where\; 0.1$