Integrierte Halbleiterspeicheranordnung

摘要

An integrated semi-conducting storage assembly presenting a semi-conducting body with integrated selection transistors (10) and storage capacitors (20). Storage capacitors (20) are provided with a dielectic layer (23) which is placed between two electrodes (21,23). At least the upper electrode (23) is designed in the form of layers with a platinum layer (23a) associated to the dielectric layer (22) and a thicker, base metal layer (23b) on top.