POLY-Si/POLY-SiGe GATE FOR CMOS DEVICES

摘要

A structure and a method of manufacturing the structure in which boron diffusion into a gate oxide layer is suppressed. The structure is formed on a semiconductor substrate and includes a gate oxide layer formed on the semiconductor substrate, a layer of doped or undoped poly-SiGe formed on the gate oxide layer. A polysilicon layer formed on the poly-SiGe layer. The polysilicon layer may be doped or undoped. If undoped, boron dopant ions are implanted in the polysilicon and heat diffused into the polysilicon layer and into the undoped poly-SiGe layer.