发明名称 |
FERROELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR MEMORY, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A ferroelectric material having a basic structure of REMnO3, said ferroelectric material comprises RE and Mn one of which is contained in excess of the other to a limit of 20 at. % or the ferroelectric material is further added with a 4-valence element. Also, a method of forming a ferroelectric material, comprises decreasing an oxygen partial pressure within a growth reactor such as a vacuum deposition reactor, and forming a film on a film-forming surface of a substrate (4) while blowing an oxidizing source thereto. This structure provides a ferroelectric material low in leak current and improved in ferroelectric characteristics. Where using the material for a semiconductor memory device, its characteristics can be improved. |
申请公布号 |
CA2238857(A1) |
申请公布日期 |
1998.04.02 |
申请号 |
CA19972238857 |
申请日期 |
1997.09.26 |
申请人 |
ROHM CO., LTD. |
发明人 |
FUJIMURA, NORIFUMI;KAMISAWA, AKIRA |
分类号 |
C01G45/00;C01G47/00;C23C14/00;C23C14/08;C30B23/02;H01L21/28;H01L21/314;H01L21/316;H01L29/51;H01L29/78 |
主分类号 |
C01G45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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